to-220-3l plastic-encapsulate diodes SBL3030CT, 35ct, 40ct, 45ct, 50ct, 60ct schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) value symbol parameter sbl 3030ct sbl 3035ct sbl 3040ct sbl 3045ct sbl 3050ct sbl 3060ct unit v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 30 35 40 45 50 60 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 42 v i o average rectified output current@ t c =100 30 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 250 a p d power dissipation 2 w r ja thermal resistance from junction to ambient 50 /w t j junction temperature 125 t stg storage temperature -55~+150 to-220-3l 1. anode 2. cathode 3. a node 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symbol device test conditions min typ max unit SBL3030CT 30 sbl3035ct 35 sbl3040ct 40 sbl3045ct 45 sbl3050ct 50 reverse voltage v (br) sbl3060ct i r =1ma 60 v SBL3030CT v r =30v sbl3035ct v r =35v sbl3040ct v r =40v sbl3045ct v r =45v sbl3050ct v r =50v reverse current i r sbl3060ct v r =60v 1 ma SBL3030CT-3045ct 0.55 forward voltage v f sbl3050ct,3060ct i f =15a 0.7 v typical total capacitance c tot SBL3030CT-3060ct v r =4v,f=1mhz 420 pf 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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